Silicon Wafer 4 Inch Double Sided Oxide Film 1000nm
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High-purity Silicon wafer for Research and Experiment.
According to demand, we can provide custom-made service.
Silicon Wafer Specification:
- Size: 4inch;
- Method: CZ;
- Type: P;
- Dopant: B;
- Orientation: 100;
- Resistivity: 0.01~0.05Ω;
- Thickness: 525um±25;
- TTV＜10um ;
- Surface: polished;
- Back side: etched;
- Oxide film: 1000nm (both sides);
- Packing: silicon wafer case;
Tracking number for every order
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- No hidden fees
Please allow 1~3 weeks for delivery to the United States, Canada.
Free shipping if the purchase amount is more than US$699.
Please allow 1~4 weeks for delivery to the rest of the world.
Free shipping if the purchase amount is more than US$749.
The following specifications can be provided according to demand