InP Substrate 2inch Indium Phosphide Single Side Polish Semiconductor Wafer

  • $145.00
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High-purity GaAs substrate for research and development.
According to demand, we can provide custom-made service.

Indium Phosphide (InP) Specification:

  • Size: 2inch ;
  • Diameter: 50.05mm±0.2 ;
  • Dopant: S-C-N/S ;
  • Thickness: 350um±25 ;
  • Flat Option: EJ;
  • Primary Orientation: [0-1-1]±0.02° ;
  • Primary Flat Length: 16mm±2 ;
  • Second Flat Orientation: [0-11] ;
  • Second Flat Length: 7mm±1 ;
  • Carrier Concentration: 2E18~8E18cm-3;
  • Resistivity: 0.6E-3~2.5E-3Ω;
  • Mobility: 1000~2000cm2/V·Sec;
  • EPD: Ave<5000cm-2;
  • Edge Rounding:0.25mmR(Conform to SEMI Standards);?
  • TTV/TIR:≤10um ;
  • BOW:≤10um ;
  • Warp:≤15um ;
  • Front side: Polished ;
  • Backside: Etched;
  • Epi-Ready: Yes ;
  • Packing: Wafer case ;

Our Products and Service:

  • Tracking number for every order

  • 24/7 assistance: service@fuledatech.com

  • Provide small quantities, special specifications products, and customized services, etc.

Shipping Worldwide:

  • After confirming the order, we will arrange the shipment within 1-3 working days.
  • We provide free shipping for products purchased above a certain amount.


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