Gallium Nitride Substrate 4inch N Type GaN On Sapphire Dummy Grade Wafer
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High-purity GaN substrate for research and development.
According to demand, we can provide custom-made service.
Gallium Nitride Specification
- Size: 4inch ;
- Type：N-type ；
- Diameter : 100mm±03 ;
- Thickness: 475um±30 ;
- Orientation:（0001）Ga face ;
- C-plane off-angle toward M-axis: ≤0.5°±0.15°；
- C-plane off-angle toward A-axis: ≤0°±0.15°；
- (002) FWHM: ＜100 arcsec；
- (102) FWHM: ＜100 arcsec；
- Primary flat orientation: M-plane(10-10), ±2° ;
- Primary flat length: 32±1mm；
- Second flat orientation: Ga face, 90° clockwise from the major orientation flat ;
- Second flat length: 18±1mm；
- Bow: -30um~30um;
- Quantity and maximum size of holes and pits: ＜240@1500um；
- Edge bevel: Beveled;
- Front side: polished ;
- Backside: etched ;
- Packing: Wafer case ;
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