Gallium Nitride Substrate 4inch N Type GaN On Sapphire Dummy Grade Wafer

  • $900.00
    Unit price per 
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 High-purity GaN substrate for research and development.
According to demand, we can provide custom-made service.

Gallium Nitride Specification

  • Size: 4inch ;
  • Type:N-type ;
  • Diameter : 100mm±03 ;
  • Thickness: 475um±30 ;
  • Orientation:(0001)Ga face ;
  • C-plane off-angle toward M-axis: ≤0.5°±0.15°;
  • C-plane off-angle toward A-axis: ≤0°±0.15°;
  • (002) FWHM: <100 arcsec;
  • (102) FWHM: <100 arcsec;
  • Resistivity:<0.02Ω;
  • Primary flat orientation: M-plane(10-10), ±2° ;
  • Primary flat length: 32±1mm;
  • Second flat orientation: Ga face, 90° clockwise from the major orientation flat ;
  • Second flat length: 18±1mm;
  • TTV<30um;
  • Sa<30nm;
  • Bow: -30um~30um;
  • Quantity and maximum size of holes and pits: <240@1500um;
  • Edge bevel: Beveled;
  • Front side: polished ;
  • Backside: etched ;
  • Packing: Wafer case ;

Our Products and Service:

     Tracking number for every order

     24/7 assistance: service@fuledatech.com

     Provide small quantities, special specifications products, and customized services, etc.

Shipping Worldwide:

     After confirming the order, we will arrange the shipment within 1-3 working days.

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