GaAs Substrate 2 Inch Gallium Arsenide Single Sided Polish Semiconductor Wafer
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High-purity GaAs substrate for research and development.
According to demand, we can provide custom-made service.
Gallium Arsenide (GaAs) Specification:
- Size: 2inch ;
- Diameter: 50.7mm±0.25 ;
- Method: VGF ;
- VGF:S-C-N ;
- Dopant: GaAs-Si ;
- Thickness: 350um±10 ;
- Orientation: (100)15°±0.5° off toward <111> A ;
- OF: EJ [0-1-1]±0.5°/17±1 ;
- TTV/TIR: Max: 10um ;
- BOW: Max10um ;
- Warp: Max10um ;
- Front side: polished ;
- Backside: Etched ;
- Epi-Ready: Yes ;
- Packing: Wafer case ;
Tracking number for every order
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Please allow 1~3 weeks for delivery to the United States, Canada.
Free shipping if the purchase amount is more than US$699.
Please allow 2~4 weeks for delivery to the rest of the world.
Free shipping if the purchase amount is more than US$749.