GaAs Substrate 2inch Gallium Arsenide Single Sided Polish Semiconductor Wafer

  • $45.00
    Unit price per 
Shipping calculated at checkout.


 High-purity GaAs substrate for research and development.
According to demand, we can provide custom-made service.

Gallium Arsenide (GaAs) Specification:

  • Size: 2inch ; 
  • Diameter: 50.7mm±0.25 ;
  • Method: VGF ;  
  • VGF:S-C-N ;
  • Dopant: GaAs-Si ; 
  • Thickness: 350um±10 ;
  • Orientation: (100)15°±0.5° off toward <111> A ;
  • OF Location/Length: EJ [0-1-1]±0.5°/17±1 ; 
  • Carrier Concentration: 0.6E18~3.2E18/cm3;
  • Resisivity: 1.2E-3~4.2E-3Ω;
  • Mobility:1629~2542cm2/V·S;
  • EPD: ≤5000/cm2;
  • TTV/TIR: Max: 10um ;
  • BOW: Max10um ; 
  • Warp: Max10um ;
  • Front side: polished ; 
  • Backside: Etched ;
  • Epi-Ready: Yes ; 
  • Packing: Wafer case ;

Our Products and Service:

  • Tracking number for every order

  • 24/7 assistance: service@fuledatech.com

  • Provide small quantities, special specifications products, and customized services, etc.

Shipping Worldwide:

  • After confirming the order, we will arrange the shipment within 1-3 working days.
  • We provide free shipping for products purchased above a certain amount.


English