InP Substrate 2inch Indium Phosphide Single Side Polish Semiconductor Wafer
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High-purity GaAs substrate for research and development.
According to demand, we can provide custom-made service.
Indium Phosphide (InP) Specification:
- Size: 2inch ;
- Diameter: 50.05mm±0.2 ;
- Dopant: S-C-N/S ;
- Thickness: 350um±25 ;
- Flat Option: EJ;
- Primary Orientation: [0-1-1]±0.02° ;
- Primary Flat Length: 16mm±2 ;
- Second Flat Orientation: [0-11] ;
- Second Flat Length: 7mm±1 ;
- Carrier Concentration: 2E18~8E18cm-3;
- Resistivity: 0.6E-3~2.5E-3Ω;
- Mobility: 1000~2000cm2/V·Sec;
- EPD: Ave＜5000cm-2;
- Edge Rounding:0.25mmR(Conform to SEMI Standards);?
- TTV/TIR:≤10um ;
- BOW:≤10um ;
- Warp:≤15um ;
- Front side: Polished ;
- Backside: Etched;
- Epi-Ready: Yes ;
- Packing: Wafer case ;
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- Provide small quantities, special specifications products, and customized services, etc.
- After confirming the order, we will arrange the shipment within 1-3 working days.
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