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GaN on Sapphire wafer 2inch P Type Mg Doped Gallium nitride Semiconductor Substrate

Sale price$255.00

Number Of Item:
♦️High-quality GaN wafer for Research and Experiment.
♦️Provide small quantities, special specifications products, and customized services
Gallium Nitride Specification:
  • Size: 2inch ;
  • Mg-Doped;
  • Diameter: 50.8 mm±0.3 mm ;
  • Thickness/Thickness STD: 4.5 ± 0.5 μm / < 3% ;
  • Orientation of GaN: C plane (0001) off angle toward A-axis 0.2 ± 0.1°;
  • Orientation Flat of GaN: (1-100) 0 ± 0.2°, 16 ± 1 mm;
  • Conduction Type: P-Type;
  • Resistivity (300K):< 10 Ω·cm;
  • Carrier Concentration:> 1 x 1017 cm -3 (doping concentration of p+GaN ≥ 5 x 1019 cm -3);
  • Mobility: > 5cm2/V·s ;
  • Structure:~ 0.5 μm p+GaN/~ 1.5 μm p-GaN /~ 2.5 μm uGaN /~ 25 nm uGaN buffer/430 ±25 μm sapphire;
  • XRD FWHMs: (0002)<300 arcsec,(10-12)<400 arcsec;
  • Orientation of Sapphire: C plane (0001) off angle toward M-axis 0.2 ± 0.1°;
  • Orientation Flat of Sapphire: (11-20) 0 ± 0.2°, 16 ± 1 mm ;
  • Sapphire Polish: Single-side polished (SSP)/Double-side polished (DSP);
  • UseableArea:> 90% (edge and macro defects exclusion);
  • Wafer case ;


gan on sapphire substrate 2inch
GaN on Sapphire wafer 2inch P Type Mg Doped Gallium nitride Semiconductor Substrate Sale price$255.00

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