GaAs Substrate 4inch Gallium Arsenide Single Sided Polish Semiconductor Wafer
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High-purity GaAs substrate for research and development.
According to demand, we can provide custom-made service.
Gallium Arsenide (GaAs Substrate) Specification:
- Size: 4inch ;
- Diameter: 100mm±0.25 ;
- Method: VGF ;
- VGF:S-C-N ;
- Dopant: GaAs-Si ;
- Thickness: 350um±25 ;
- Orientation: (100)15°±0.5° off toward <111> A ;
- OF Location/Length: EJ [0-1-1]±0.5°/32.5±1 ;
- Carrier Concentration: 0.7E18~3.2E18/cm3；
- Resisivity: 1.2E-3~8.9E-3Ω；
- EPD: ≤5000/cm2;
- TTV/TIR: Max: 10um ;
- BOW: Max: 10um ;
- Warp: Max: 10um ;
- Front side: polished ;
- Backside: Etched ;
- Epi-Ready: Yes ;
- Packing: Wafer case ;
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