GaAs Substrate 4inch Gallium Arsenide Single Sided Polish Semiconductor Wafer

 High-purity GaAs substrate for research and development.
According to demand, we can provide custom-made service. 

Gallium Arsenide (GaAs Substrate) Specification:

• Size: 4inch ;
• Diameter: 100mm±0.25 ;
• Method: VGF ; 
• VGF:S-C-N ;
• Dopant: GaAs-Si ;
• Thickness: 350um±25 ;
• Orientation: (100)15°±0.5° off toward <111> A ;
• OF Location/Length: EJ [0-1-1]±0.5°/32.5±1 ;
• Carrier Concentration: 0.7E18~3.2E18/cm3；
• Resisivity: 1.2E-3~8.9E-3Ω；
• Mobility：1628~2642cm2/V·S；
• EPD: ≤5000/cm2;
• TTV/TIR: Max: 10um ;
• BOW: Max: 10um ;
• Warp: Max: 10um ;
• Front side: polished ;
• Backside: etched ;
• Epi-Ready: Yes ;
• Packing: Wafer case ;

Our Products and Service:

• Tracking number for every order
  
  
• 24/7 assistance: service@fuledatech.com
  
  
• Provide small quantities, special specifications products, and customized services, etc.
  
  

Shipping Worldwide:

• After confirming the order, we will arrange the shipment within 1-3 working days.

• We provide free shipping for products purchased above a certain amount.