GaAs Substrate 4inch Gallium Arsenide Single Sided Polish Semiconductor Wafer

  • $69.00
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 High-purity GaAs substrate for research and development.
According to demand, we can provide custom-made service. 

Gallium Arsenide (GaAs Substrate) Specification:

  • Size: 4inch ;
  • Diameter: 100mm±0.25 ;
  • Method: VGF ; 
  • VGF:S-C-N ;
  • Dopant: GaAs-Si ;
  • Thickness: 350um±25 ;
  • Orientation: (100)15°±0.5° off toward <111> A ;
  • OF Location/Length: EJ [0-1-1]±0.5°/32.5±1 ;
  • Carrier Concentration: 0.7E18~3.2E18/cm3;
  • Resisivity: 1.2E-3~8.9E-3Ω;
  • Mobility:1628~2642cm2/V·S;
  • EPD: ≤5000/cm2;
  • TTV/TIR: Max: 10um ;
  • BOW: Max: 10um ;
  • Warp: Max: 10um ;
  • Front side: polished ;
  • Backside: Etched ;
  • Epi-Ready: Yes ;
  • Packing: Wafer case ;

Our Products and Service:

  • Tracking number for every order

  • 24/7 assistance: service@fuledatech.com

  • Provide small quantities, special specifications products, and customized services, etc.

Shipping Worldwide:

  • After confirming the order, we will arrange the shipment within 1-3 working days.
  • We provide free shipping for products purchased above a certain amount.
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