GaAs Substrate 4 Inch Gallium Arsenide Single Sided Polish Semiconductor Wafer

  • $69.00
    Unit price per 
Shipping calculated at checkout.


 High-purity GaAs substrate for research and development.
According to demand, we can provide custom-made service. 

Gallium Arsenide (GaAs Substrate) Specification:

  • Size: 4inch ;
  • Diameter: 100mm±0.25 ;
  • Method: VGF ; 
  • VGF:S-C-N ;
  • Dopant: GaAs-Si ;
  • Thickness: 350um±25 ;
  • Orientation: (100)15°±0.5° off toward <111> A ;
  • OF: EJ [0-1-1]±0.5°/32.5±1 ;
  • TTV/TIR: Max: 10um ;
  • BOW: Max: 10um ;
  • Warp: Max: 10um ;
  • Front side: polished ;
  • Back side: Etched ;
  • Epi-Ready: Yes ;
  • Packing: Wafer case ;

Our Guarantee:

 Tracking number for every order
 24/7 assistance: service@fuledatech.com
 No hidden fees

Shipping Worldwide:

 Please allow 1~3 weeks for delivery to the United States, Europe. 
    Free shipping if the purchase amount is more than 
US$699.
 Please allow 2~4 weeks for delivery to the rest of the world.
    Free shipping if the purchase amount is more than US$749.


English