GaN Substrate 4inch N Type Gallium Nitride Dummy Grade Wafer
High-purity GaN substrate for research and development.
According to demand, we can provide custom-made service.
Gallium Nitride Specification
- Size: 4inch ;
- Type: N-type ;
- Diameter : 100mm±03 ;
- Thickness: 450um±30 ;
- Orientation:(0001)Ga face ;
- C-plane off-angle toward M-axis: ≤0.5°±0.15°;
- C-plane off-angle toward A-axis: ≤0°±0.15°;
- (002) FWHM: <100 arcsec;
- (102) FWHM: <100 arcsec;
- Resistivity:<0.02Ω;
- Primary flat orientation: M-plane(10-10), ±2° ;
- Primary flat length: 32±1mm;
- Second flat orientation: Ga face, 90° clockwise from the major orientation flat ;
- Second flat length: 18±1mm;
- TTV<30um;
- Sa<0.3nm(10um*10um);
- Bow: -40um~20um;
- Quantity and maximum size of holes and pits: <200@1500um;
- Edge bevel: Beveled;
- Front side: polished ;
- Backside: polished ;
- Packing: Wafer case ;
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