Gallium Nitride Substrate 4inch N Type GaN On Sapphire Dummy Grade Wafer

 High-purity GaN substrate for research and development.
According to demand, we can provide custom-made service.

Gallium Nitride Specification

• Size: 4inch ;
• Type：N-type ；
• Diameter : 100mm±03 ;
• Thickness: 475um±30 ;
• Orientation:（0001）Ga face ;
• C-plane off-angle toward M-axis: ≤0.5°±0.15°；
• C-plane off-angle toward A-axis: ≤0°±0.15°；
• (002) FWHM: ＜100 arcsec；
• (102) FWHM: ＜100 arcsec；
• Resistivity：＜0.02Ω；
• Primary flat orientation: M-plane(10-10), ±2° ;
• Primary flat length: 32±1mm；
• Second flat orientation: Ga face, 90° clockwise from the major orientation flat ;
• Second flat length: 18±1mm；
• TTV＜30um;
• Sa＜30nm;
• Bow: -30um~30um;
• Quantity and maximum size of holes and pits: ＜240@1500um；
• Edge bevel: Beveled;
• Front side: polished ;
• Backside: etched ;
• Packing: Wafer case ;

Our Products and Service:

     Tracking number for every order

     24/7 assistance: service@fuledatech.com

     Provide small quantities, special specifications products, and customized services, etc.

Shipping Worldwide:

     After confirming the order, we will arrange the shipment within 1-3 working days.

     We provide free shipping for products purchased above a certain amount.