Gallium Oxide Wafer 4inch Sn-doped β-Ga2O3

  • $5,899.00
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 High-purity Ga2O3 substrate for research and development.
According to demand, we can provide custom-made service.

Gallium Oxide Wafer Specification

  • Size: 4inch ;
  • Type: N-type ;
  • Dopant: Sn ;
  • Nd~Na: 1×10^18 ~2×10^19;
  • Diameter : 100mm±0.5;
  • Thickness : 650um±20;
  • Primary Flat Length: 32.5mm±2.5 ;
  • Primary Offset angle: [010]:0°±1;
  • FWHM: [010]:350 arcsec or less;
  • Second Flat Length: 18.0mm±2.5 ;
  • Second Offset angle: [100]:0°±1;
  • FWHM: [100]:350 arcsec or less;
  • Front side: CMP ;
  • Backside: CMP;
  • Packing: Wafer case ;

      

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  • After confirming the order, we will arrange the shipment within 1-3 working days.
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