SOI Substrate 6inch Silicon On Insulator Wafer
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High-purity SOI substrate for research and development.
According to demand, we can provide custom-made service.
SOI Wafer Specification
- Size: 6inch ;
- Diameter : 150mm±0.3 ;
- Primary Flat Orientation: 110 ;
- Primary Flat Length: 57.5mm±2.5 ;
- Dislocation Density: 100/cm2;
- Dopant: P;
- SOI Device Thickness: 50um±1;
- Device Resistivity: 1-10Ω;
- Thermal Buried Oxide:1um±5% ;
- Handle Thickness: 500um±15 ;
- Handel Resistivity: 1~10Ω;
- Front side: polished ;
- Backside: polished;
- Packing: Wafer case ;
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- Provide small quantities, special specifications products, and customized services, etc.
- After confirming the order, we will arrange the shipment within 1-3 working days.
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