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SOI Substrate 6inch Silicon On Insulator Wafer
SOI Substrate 6inch Silicon On Insulator Wafer
SOI Substrate 6inch Silicon On Insulator Wafer

SOI Substrate 6inch Silicon On Insulator Wafer

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 High-purity SOI substrate for research and development.
 According to demand, we can provide custom-made service.

SOI Wafer Specification

  • Size: 6inch ;
  • Type:N-type;
  • Diameter : 150mm±0.3 ;
  • Primary Flat Orientation: 110 ;
  • Primary Flat Length: 57.5mm±2.5 ;
  • Dislocation Density: 100/cm2;
  • Dopant: P;
  • SOI Device Thickness: 50um±1;
  • Device Resistivity: 1-10Ω;
  • Thermal Buried Oxide:1um±5% ;
  • Handle Thickness: 500um±15 ;
  • Handel Resistivity: 1~10Ω;
  • Bow＜60um;
  • Warp＜60um;
  • Front side: polished ;
  • Backside: polished;
  • Packing: Wafer case ;

Our Products and Service:

  • Tracking number for every order

  • 24/7 assistance: service@fuledatech.com

  • Provide small quantities, special specifications products, and customized services, etc.

Shipping Worldwide:

  • After confirming the order, we will arrange the shipment within 1-3 working days.
  • We provide free shipping for products purchased above a certain amount.
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