SiC Substrate 4inch N type Ultra grade 4H-SiC

  • $495.00
    Unit price per 
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High-purity SiC substrate for research and development.
 According to demand, we can provide custom-made service.

SiC Wafer Specification

  • Size: 4inch;
  • Diameter: 100.0 mm ± 0.5;
  • Thickness: 350 μm ±25;
  • Wafer Orientation: Off axis: (4.0° toward <11-20> ±0.5°);
  • Micropipe: ≤1 micropipe/cm-2;
  • Resistivity: 0.015~0.028 Ω・cm;
  • OF: {11-20}±5.0°;
  • Roughness: Ra≦0.2 nm;
  • TTV: ≤10um;
  • Bow: ≤25um;
  • Warp: ≤45um;
  • Cracks: None;
  • Edge Chips: None;
  • Packing: Multi-wafer Cassette Or Single Wafer Container;

Our Guarantee:

  •  Tracking number for every order

  •  24/7 assistance: service@fuledatech.com

  •  No hidden fees

Shipping Worldwide:

  •  Please allow 1~3 weeks for delivery to the United States, Canada. 
         Free shipping if the purchase amount is more than US$699.
  •  Please allow 2~4 weeks for delivery to the rest of the world.
         Free shipping if the purchase amount is more than US$749.


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