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Silicon Carbide Substrate 4inch NG Grade Semi Insulating 4H SiC Wafer IGBT

Sale price$165.00

Number Of Item:
♦️High-quality SiC wafer for Research and Experiment.
♦️Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
SiC Substrate Specification:
  • Size: 4inch;
  • Diameter: 100.8 mm ±0.5;
  • Thickness: 500 um±25;
  • Surface Orientation: <0001>±0.2°;
  • Primary flat orientation:[11-20]±5°;
  • Secondary flat orientation: Silicon face up 90°CW. from Prime flat±5°;
  • Micropipe: N/A;
  • Resistivity: N/A;
  • TTV≤10um;
  • Warp≤45um;
  • Bow≤≤30um;
  • Surface Roughness: Si face Ra≤0.5 nm;
  • Cracks: None;
  • Wafer edge: Bevelling;
  • Surface finish: Double Side Polish, Si Face CMP;
  • Packing: Multi-wafer Cassette Or Single Wafer Container;


sic substrate  6 Inch Product Grade
Silicon Carbide Substrate 4inch NG Grade Semi Insulating 4H SiC Wafer IGBT Sale price$165.00

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