Silicon wafer 4inch P Type(100) SIN Layer 150/300nm Semiconductor Substrate
Silicon wafer 4inch P Type(100) SIN Layer 150/300nm Semiconductor Substrate

FULEDE TECHNOLOGY

Silicon wafer 4inch P Type(100) SIN Layer 150/300nm Semiconductor Substrate

Sale price$35.00 USD
Number Of Items:1 Item
Specification:P(100) 525um SIN Layer 150nm
Quantity:
♦️ High-quality silicon wafer for Research and Experiment.
♦️ Provide small quantities, special specifications products, and customized services.
Silicon Wafer Specification:
  • Size: 4inch;
  • Method: CZ;
  • Type: P;
  • Dopant: B;
  • Orientation: 100;
  • Resistivity: <0.0015Ω・cm;
  • Thickness: 525um±25;
  • SIN layer: 150nm/300nm (both sides);
  • TTV<10um ;
  • Surface: polished;
  • Backside: etched;
  • Packing: silicon wafer case ;