Silicon Wafer 6inch N-Type(100) 0.002~0.004Ω Oxide Film 300nm
High-purity Silicon wafer for Research and Experiment.
According to demand, we can provide custom-made service.
Silicon Wafer Specification:
- Size: 6inch;
- Method: CZ;
- Type: N;
- Dopant: As;
- Orientation: 100;
- Resistivity: 0.002~0.004Ω·cm;
- Thickness: 625um±25;
- TTV<10um ;
- Surface: polished;
- Backside: etched;
- Oxide film: 300nm (both sides);
- Packing: silicon wafer case;
Our Products and Service:



Shipping Worldwide:
After confirming the order, we will arrange the shipment within 1-3 working days.
We provide free shipping for products purchased above a certain amount.
