Silicon wafer 6inch N Type100 0.002~0.004Ω Oxide Layer Semiconductor Substrate
Silicon wafer 6inch N Type100 0.002~0.004Ω Oxide Layer Semiconductor Substrate

FULEDE TECHNOLOGY

Silicon wafer 6inch N Type100 0.002~0.004Ω Oxide Layer Semiconductor Substrate

Sale price$28.90 USD
Specification:N(100) 600um Oxide Layer 280nm
Number Of Items:1 Item
Quantity:
♦️ High-quality silicon wafer for Research and Experiment.
♦️ Provide small quantities, special specifications products, and customized services.
Silicon Wafer Specification:
  • Size: 6inch;
  • Method: CZ;
  • Type: N;
  • Dopant: As;
  • Orientation: 100;
  • Resistivity: 0.002~0.004Ω·cm;
  • Thickness: 600um±25/625um±25;
  • Oxide layer: 280/300/500nm (both sides);
  • TTV<15um ;
  • Surface: polished;
  • Backside: etched;
  • Packing: silicon wafer case;