SiC Substrate High Purity 6inch N type dummy grade 4H-SiC

  • $615.00
    Unit price per 
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 High-purity SiC substrate for research and development.
 According to demand, we can provide custom-made service.

SiC Substrate Specification:

  • Size: 6inch;
  • Diameter: 150.0 mm ± 0.25;
  • Thickness: 350 μm ±25;
  • Wafer Orientation: Off axis (4.0° toward <11-20> ±0.5°);
  • Micropipe: ≤10 cm-2;
  • Resistivity: 0.015~0.028 Ω・cm;
  • OF: {11-20}±5.0°;
  • Roughness: N/A;
  • Cracks: N/A;
  • Surface finish: C-face:MP, Si-face:CMP;
  • TTV: ≤10um;
  • Bow: ≤40um;
  • Warp: ≤60um;
  • Edge chips: ≤2, the length and width of each <1mm;
  • Packing: Multi-wafer Cassette Or Single Wafer Container;


Our Guarantee:

  •  Tracking number for every order

  •  24/7 assistance: service@fuledatech.com

  •  No hidden fees

Shipping Worldwide:

  •  Please allow 1~3 weeks for delivery to the United States, Canada. 
         Free shipping if the purchase amount is more than US$699.
  •  Please allow 1~4 weeks for delivery to the rest of the world.
         Free shipping if the purchase amount is more than US$749.


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