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Silicon Carbide Substrate 6inch Dummy Grade 4H N Type SiC Wafer IGBT

Sale price$405.00

Number Of Item:
♦️High-quality SiC wafer for Research and Experiment.
♦️Provide small quantities, special specifications products, and customized services.
SiC Substrate Specification:
  • Size: 6inch;
  • Diameter: 150mm±0.25;
  • Thickness: 350um±25;
  • Surface Orientation: 4°toward[11-20]±5°;
  • Primary Flat orientation:[11-20]±5°;
  • Primary Flat Length:47.5mm±1.5;
  • Secondary flat: None;
  • Micropipe: ≤10/cm2;
  • Resistivity: 0.015~0.028Ω;
  • TTV≤10um;
  • Warp≤55um;
  • Bow≤45um;
  • Surface Roughness: Si face Ra<0.5 nm;
  • Cracks: None;
  • Roughness: None;
  • Edge Chips: ≤2, the length and width of each <1mm;
  • Surface finish: Double Side Polish, Si Face CMP;
  • Packing: Multi-wafer Cassette Or Single Wafer Container;
sic substrate  6 Inch Product Grade
Silicon Carbide Substrate 6inch Dummy Grade 4H N Type SiC Wafer IGBT Sale price$405.00

Business Cooperation

Unite Kingdom

Contact person: Elsa

Email: elsa@fuledatech.com

Tel: +44-7972294236

Japan

Contact person: Shon

Email: shon@fuledatech.com

Tel:+81-9050920178

Korea

Contact person: Kim

Email: kim@fuledatech.com

Tel: +82-1090065688

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