Silicon Carbide Substrate 4inch Test Grade Semi Insulating 4H SiC Wafer IGBT
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High-purity SiC substrate for research and development.
According to demand, we can provide custom-made service.
SiC Substrate Specification:
- Size: 4inch;
- Diameter: 100.8 mm ±0.5;
- Thickness: 500 um±25;
- Surface Orientation: <0001>±0.2°;
- Primary flat orientation:[11-20]±5°；
- Secondary flat orientation: Silicon face up 90°CW. from Prime flat±5°；
- Micropipe: N/A;
- Resistivity: N/A;
- Surface Roughness: Si face Ra≤0.5 nm;
- Cracks: None;
- Wafer edge: Bevelling;
- Surface finish: Double Side Polish, Si Face CMP;
- Packing: Multi-wafer Cassette Or Single Wafer Container;
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- Provide small quantities, special specifications products, and customized services, etc.
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