Silicon Carbide Substrate 4inch NG Grade Semi Insulating 4H SiC Wafer IGBT

  • $165.00
    Unit price per 
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High-purity SiC substrate for research and development.
 According to demand, we can provide custom-made service.

SiC Substrate Specification:

  • Size: 4inch;
  • Diameter: 100.8 mm ±0.5;
  • Thickness: 500 um±25;
  • Surface Orientation: <0001>±0.2°;
  • Primary flat orientation:[11-20]±5°;
  • Secondary flat orientation: Silicon face up 90°CW. from Prime flat±5°;
  • Micropipe: N/A;
  • Resistivity: N/A;
  • TTV≤10um;
  • Warp≤45um;
  • Bow≤≤30um;
  • Surface Roughness: Si face Ra≤0.5 nm;
  • Cracks: None;
  • Wafer edge: Bevelling;
  • Surface finish: Double Side Polish, Si Face CMP;
  • Packing: Multi-wafer Cassette Or Single Wafer Container;

Our Products and Services:

  • Tracking number for every order

  • 24/7 assistance:

  • Provide small quantities, special specifications products, customized services, etc.

Shipping Worldwide:

  • After confirming the order, production will take 2~3 weeks.
  • We provide free shipping for products purchased above a certain amount.