Silicon Carbide Substrate 4inch NG Grade Semi Insulating 4H SiC Wafer IGBT

High-purity SiC substrate for research and development.
 According to demand, we can provide custom-made service.

SiC Substrate Specification:

• Size: 4inch;
• Diameter: 100.8 mm ±0.5;
• Thickness: 500 um±25;
• Surface Orientation: <0001>±0.2°;
• Primary flat orientation:[11-20]±5°；
• Secondary flat orientation: Silicon face up 90°CW. from Prime flat±5°；
• Micropipe: N/A;
• Resistivity: N/A;
• TTV≤10um；
• Warp≤45um；
• Bow≤≤30um；
• Surface Roughness: Si face Ra≤0.5 nm;
• Cracks: None;
• Wafer edge: Bevelling;
• Surface finish: Double Side Polish, Si Face CMP;
• Packing: Multi-wafer Cassette Or Single Wafer Container;

Our Products and Services:

• Tracking number for every order
  
  
• 24/7 assistance: service@fuledatech.com
  
  
• Provide small quantities, special specifications products, customized services, etc.
  
  

Shipping Worldwide:

• After confirming the order, production will take 2~3 weeks.

• We provide free shipping for products purchased above a certain amount.