Silicon Carbide Substrate 6inch Test Grade N Type 4H SiC Wafer IGBT
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High-purity SiC substrate for research and development.
According to demand, we can provide custom-made service.
SiC Substrate Specification:
- Size: 6inch;
- Diameter: 150mm±0.2;
- Thickness: 350 um±25;
- Surface Orientation: 4°toward[11-20]±5°;
- Primary flat orientation:[11-20]±5°；
- Secondary flat orientation: None；
- Micropipe: None;
- Resistivity: None;
- Surface Roughness: Si face Ra≤0.5 nm;
- Cracks: None;
- Wafer edge: Bevelling;
- Surface finish: Double Side Polish, Si Face CMP;
- Packing: Multi-wafer Cassette Or Single Wafer Container;
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- Provide small quantities, special specifications products, and customized services, etc.
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