Silicon Carbide Substrate 6inch Dummy Grade 4H N Type SiC Wafer IGBT

  • $450.00
    Unit price per 
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 High-purity SiC substrate for research and development.
 According to demand, we can provide custom-made service.

SiC Substrate Specification:

  • Size: 6inch;
  • Diameter: 150mm±0.25;
  • Thickness: 350um±25;
  • Surface Orientation: 4°toward[11-20]±5°;
  • Primary Flat orientation:[11-20]±5°;
  • Primary Flat Length:47.5mm±1.5;
  • Secondary flat: None;
  • Micropipe: ≤10/cm2;
  • Resistivity: 0.015~0.028Ω;
  • TTV≤10um;
  • Warp≤60um;
  • Bow≤40um;
  • Surface Roughness: Si face Ra<0.5 nm;
  • Cracks: None;
  • Roughness: None;
  • Edge Chips: ≤2, the length and width of each <1mm;
  • Surface finish: Double Side Polish, Si Face CMP;
  • Packing: Multi-wafer Cassette Or Single Wafer Container;

Our Products and Services:

  • Tracking number for every order

  • 24/7 assistance:

  • Provide small quantities, special specifications products, customized services, etc.

Shipping Worldwide:

  • After confirming the order, we will arrange the shipment within 1-3 weeks.
  • We provide free shipping for products purchased above a certain amount.