Silicon Carbide Substrate 6inch Dummy Grade 4H N Type SiC Wafer IGBT
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High-purity SiC substrate for research and development.
According to demand, we can provide custom-made service.
SiC Substrate Specification:
- Size: 6inch;
- Diameter: 150mm±0.25;
- Thickness: 350um±25;
- Surface Orientation: 4°toward[11-20]±5°;
- Primary Flat orientation:[11-20]±5°;
- Primary Flat Length:47.5mm±1.5;
- Secondary flat: None;
- Micropipe: ≤10/cm2;
- Resistivity: 0.015~0.028Ω;
- Surface Roughness: Si face Ra＜0.5 nm;
- Cracks: None;
- Routhness: None;
- Edge Chips: ≤2, the length and width of each ＜1mm;
- Surface finish: Double Side Polish, Si Face CMP;
- Packing: Multi-wafer Cassette Or Single Wafer Container;
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