GaAs Substrate 4inch Gallium Arsenide No Dope Double Sided Polish Semiconductor Wafer

  • $129.00
    Unit price per 
Shipping calculated at checkout.


 High-purity GaAs substrate for research and development.
According to demand, we can provide custom-made service. 

Gallium Arsenide (GaAs Substrate) Specification:

  • Size: 4inch ;
  • Diameter: 100mm±0.25 ;
  • Method: VGF ; 
  • Type: N ;
  • Dopant: No Dope ;
  • Thickness: 625um±25 ;
  • Orientation: (100)°±0.5° ;
  • Prime Flat/Length: EJ [0-1-1]±0.5°/32.5mm±1 ;
  • Secon Flat/Length: EJ [0-1-1]±0.5°/18mm±1 ;
  • Carrier Concentration: 1.0E15~1.0E16/cm3;
  • Resisivity: ≥1.0E8Ω;
  • Mobility:≥4500cm2/V·S;
  • EPD: ≤5000/cm2;
  • TTV/TIR: Max: 10um ;
  • BOW: Max: 10um ;
  • Warp: Max: 10um ;
  • Front side: polished ;
  • Backside: polished  ;
  • Packing: Wafer case ;

Our Products and Service:

  • Tracking number for every order

  • 24/7 assistance: service@fuledatech.com

  • Provide small quantities, special specifications products, and customized services, etc.

Shipping Worldwide:

  • After confirming the order, we will arrange the shipment within 1-3 working days.
  • We provide free shipping for products purchased above a certain amount.
English