GaAs Substrate 4inch Gallium Arsenide No Dope Double Sided Polish Semiconductor Wafer
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High-purity GaAs substrate for research and development.
According to demand, we can provide custom-made service.
Gallium Arsenide (GaAs Substrate) Specification:
- Size: 4inch ;
- Diameter: 100mm±0.25 ;
- Method: VGF ;
- Type: N ;
- Dopant: No Dope ;
- Thickness: 625um±25 ;
- Orientation: (100)°±0.5° ;
- Prime Flat/Length: EJ [0-1-1]±0.5°/32.5mm±1 ;
- Secon Flat/Length: EJ [0-1-1]±0.5°/18mm±1 ;
- Carrier Concentration: 1.0E15~1.0E16/cm3；
- Resisivity: ≥1.0E8Ω；
- EPD: ≤5000/cm2;
- TTV/TIR: Max: 10um ;
- BOW: Max: 10um ;
- Warp: Max: 10um ;
- Front side: polished ;
- Backside: polished ;
- Packing: Wafer case ;
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