GaAs Substrate 4inch Gallium Arsenide No Dope Double Sided Polish Semiconductor Wafer

 High-purity GaAs substrate for research and development.
According to demand, we can provide custom-made service. 

Gallium Arsenide (GaAs Substrate) Specification:

• Size: 4inch ;
• Diameter: 100mm±0.25 ;
• Method: VGF ; 
• Type: N ;
• Dopant: No Dope ;
• Thickness: 625um±25 ;
• Orientation: (100)°±0.5° ;
• Prime Flat/Length: EJ [0-1-1]±0.5°/32.5mm±1 ;
• Second Flat/Length: EJ [0-1-1]±0.5°/18mm±1 ;
• Carrier Concentration: 1.0E15~1.0E16/cm3；
• Resistivity: ≥1.0E8Ω；
• Mobility：≥4500cm2/V·S；
• EPD: ≤5000/cm2;
• TTV/TIR: Max: 10um ;
• BOW: Max: 10um ;
• Warp: Max: 10um ;
• Front side: polished ;
• Backside: polished  ;
• Packing: Wafer case ;

Our Products and Services:

• Tracking number for every order
  
  
• 24/7 assistance: service@fuledatech.com
  
  
• Provide small quantities, special specifications products, and customized services, etc.
  
  

Shipping Worldwide:

• After confirming the order, we will arrange the shipment within 1-3 working days when we have stocks..

• We provide free shipping for products purchased above a certain amount.