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GaAs Substrate 4inch Gallium Arsenide No Dope Double Sided Polish Semiconductor Wafer

Sale price$129.00

Number Of Items:
♦️High-quality GaAs wafer for Research and Experiment.
♦️Provide small quantities, special specifications products, and customized services
Gallium Arsenide (GaAs) Specification:
  • Size: 4inch ;
  • Diameter: 100mm±0.25 ;
  • Method: VGF ; 
  • Type: N ;
  • Dopant: No Dope ;
  • Thickness: 625um±25 ;
  • Orientation: (100)°±0.5° ;
  • Prime Flat/Length: EJ [0-1-1]±0.5°/32.5mm±1 ;
  • Second Flat/Length: EJ [0-1-1]±0.5°/18mm±1 ;
  • Carrier Concentration: 1.0E15~1.0E16/cm3;
  • Resistivity: ≥1.0E8Ω;
  • Mobility:≥4500cm2/V·S;
  • EPD: ≤5000/cm2;
  • TTV/TIR: Max: 10um ;
  • BOW: Max: 10um ;
  • Warp: Max: 10um ;
  • Front side: polished ;
  • Backside: polished  ;
  • Packing: Wafer case ;
4 Inch Gallium Arsenide (GaAs) Single Sided Polish Semiconductor Wafer
GaAs Substrate 4inch Gallium Arsenide No Dope Double Sided Polish Semiconductor Wafer Sale price$129.00

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