4 Inch Gallium Arsenide (GaAs) Single Sided Polish Semiconductor Wafer
4 Inch Gallium Arsenide (GaAs) Single Sided Polish Semiconductor Wafer
4 Inch Gallium Arsenide (GaAs) Single Sided Polish Semiconductor Wafer

FULEDE TECHNOLOGY

GaAs Substrate 6inch Gallium Arsenide Double Sided Polish Semiconductor Wafer

Sale price$195.00 USD
Number Of Items:1 Item
Quantity:
♦️High-quality GaAs wafer for Research and Experiment.
♦️Provide small quantities, special specifications products, and customized services
Gallium Arsenide (GaAs) Specification:
  • Size: 6inch ;
  • Diameter: 150mm±0.3 ;
  • Method: VGF ; 
  • Type: N ;
  • Dopant: GaAs-Si ;
  • Thickness: 550um±25 ;
  • Orientation: (100)15°±0.5° off toward <111> A ;
  • OF Location/Length: EJ [0-1-1]±0.5°/32.5±1 ;
  • Carrier Concentration: 0.4~4.0E18;
  • Resistivity: 1.0~6.0E-3Ω;
  • Mobility:≥1500cm2/V·S;
  • EPD: Ave.≤5000/cm2;
  • TTV/TIR: Max: 10um ;
  • BOW: Max: 15um ;
  • Warp: Max: 15um ;
  • Front side: polished ;
  • Backside: polished  ;
  • Epi-Ready: Yes ;
  • Packing: Wafer case ;