gan on sapphire substrate 2inch
gan on sapphire substrate 2inch

FULEDE TECHNOLOGY

GaN on Sapphire wafer 2inch Undoped Gallium nitride Semiconductor Substrate

Sale price$175.00 USD
Number Of Item:1 Item
Quantity:
♦️High-quality GaN wafer for Research and Experiment.
♦️Provide small quantities, special specifications products, and customized services
Gallium Nitride Specification:
  • Size: 2inch ;
  • Si-Doped;
  • Diameter: 50.8 mm±0.3 mm ;
  • Thickness/Thickness STD: 4.5 ± 0.5 μm / < 3% ;
  • Orientation of GaN: C plane (0001) off angle toward A-axis 0.2 ± 0.1°;
  • Orientation Flat of GaN: (1-100) 0 ± 0.2°, 16 ± 1 mm;
  • Conduction Type: N-Type;
  • Resistivity (300K):< 0.5 Ω·cm;
  • Carrier Concentration:<2 x 1017 cm-3 (≈ doping concentration);
  • XRD FWHMs: (0002)<300arcsec,(10-12)<400arcsec;
  • Mobility: > 300cm2/V·s ;
  • Structure:~ 4.5μm uGaN/~ 25 μm uGaN/430 ± 25 μm sapphire;
  • Orientation of Sapphire: C plane (0001) off angle toward M-axis 0.2 ± 0.1° ;
  • Orientation Flat of Sapphire: (11-20) 0 ± 0.2°, 16 ± 1 mm ;
  • Sapphire Polish: Single side polished (SSP) ;
  • UseableArea:> 90% (edge and macro defects exclusion);
  • Wafer case ;