gan on sapphire substrate 2inch
gan on sapphire substrate 2inch

FULEDE TECHNOLOGY

GaN on Sapphire wafer 4inch N Type Undoped Gallium nitride Semiconductor Substrate

Sale price$175.00 USD
Number Of Item:1 Item
Quantity:

♦️High-quality GaN wafer for Research and Experiment.

♦️ Provide small quantities, special specifications products, and customized services

Gan on Sapphire Substrate Specification:

  • Size: 4inch ;
  • Undoped;
  • Diameter: 100 mm±0.2 mm ;
  • Thickness/Thickness STD: 4.5 ± 0.5 μm / < 3% ;
  • Orientation of GaN: C plane (0001) off angle toward A-axis 0.2 ± 0.1°;
  • Orientation Flat of GaN: (1-100) 0 ± 0.2°, 16 ± 1 mm;
  • Conduction Type: N-Type;
  • Resistivity (300K):< 0.5 Ω·cm;
  • Carrier Concentration: ≤ 2 x 1017 cm -3
  • Mobility: > 300cm2/V·s ;
  • XRD FWHMs: (0002) < 300 arcsec,(10-12) < 400 arcsec;

  • Structure:~ 4.5μm uGaN /~ 25 nm uGaN buffer/650 ±25 μm sapphire;
  • Orientation of Sapphire: C plane (0001) off angle toward M-axis 0.2 ± 0.1° ;
  • Orientation Flat of Sapphire: (11-20) 0 ± 0.2°, 30 ± 1 mm ;
  • Sapphire Polish: Single side polished (SSP)/ Double side polished (DSP);
  • UseableArea:> 90% (edge and macro defects exclusion);
  • Wafer case ;