4 Inch LiNbO3(LN) Semiconductor Substrate - FULEDA TECHNOLOGY
4 Inch LiNbO3(LN) Semiconductor Substrate - FULEDA TECHNOLOGY
4 Inch LiNbO3(LN) Semiconductor Substrate - FULEDA TECHNOLOGY
4 Inch LiNbO3(LN) Semiconductor Substrate - FULEDA TECHNOLOGY

FULEDE TECHNOLOGY

LiNbO3 Substrate 3inch Y-axis 36º SSP SAW Acoustic Optics Grade LN Wafer

Sale price$53.50 USD
Number Of Items:1 Item
Quantity:
♦️High-quality LN wafer for Research and Experiment.
♦️Provide small quantities, special specifications products, and customized services
LiNbO3(LN) Substrate  Specification:
  • Size: 3inch;
  • Method: CZ; 
  • Diameter: 100 ± 0.5mm;
  • Thickness: 800um ± 25;
  • Orientation: 36º Rotated Y-axis;
  • TTV<10um;
  • Front side: polished;
  • Backside: lapped;
  • Packing: Wafer case + clean pack;