Silicon Carbide EPI Substrate 6inch Production Grade SiC Wafer IGBT
High-purity SiC substrate for research and development.
According to demand, we can provide custom-made service.
SiC Substrate Specification:
- Size: 6inch;
- Diameter: 150mm±0.5;
- Thickness: 350 um±25;
- Type:off-axis: N-Type;
- Primary flat Location:<1120>+/-5degree;
- Epi-surface Inspection
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surface pits (size > 0.2um):≦ 5000 ea
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surface defect (size > 10um):≦ 1 ea/cm-2;
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BPD counts:;≦ 20 ea
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Die yield (2*2mm, EE 5mm):≧ 95%;
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Buffer Layer
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Target Thickness (avg.):0.5um±10%;
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Target Doping concentration (avg.):;1.0E18/cm3 ±10%;
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Drift Layer
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Target Thickness (avg.):10um ±6%;
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Target Doping concentration (avg.):8.5E15/cm3 ±10%;
- Wafer edge: Chamfer;
- Surface finish: Double Side Polish, Si Face CMP;
- Packing: Multi-wafer Cassette Or Single Wafer Container;
Our Products and Service:
Tracking number for every order
24/7 assistance: service@fuledatech.com
Provide small quantities, special specifications products, and customized services, etc.
Shipping Worldwide:
After confirming the order, we will arrange the shipment within 3-5 working days.
We provide free shipping for products purchased above a certain amount.