Silicon Carbide Substrate 3inch Ultra Grade N Type 4H SiC Wafer IGBT

  • $178.00
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 High-purity SiC substrate for research and development.
 According to demand, we can provide custom-made service.

SiC Substrate Specification:

  • Size: 3inch;
  • Diameter: 76.2mm±0.38;
  • Thickness: 350 um±25;
  • Surface Orientation:off-axis: 4° toward <11-20> ± 0.5°;
  • Primary flat orientation:[11-20]±5°;
  • Secondary flat orientation:90.0˚ CW from Primary ± 5.0˚, silicon face up;
  • Micropipe:≤1 micropipes/ cm2;
  • Resistivity:0.015 Ω·cm~0.028 Ω·cm;
  • TTV≤10um;
  • Warp≤35um;
  • Bow≤15um;
  • Surface Roughness: Si face Ra≤0.5 nm;
  • Cracks: None;
  • Wafer edge: Chamfer;
  • Surface finish: Double Side Polish, Si Face CMP;
  • Packing: Multi-wafer Cassette Or Single Wafer Container;

Our Products and Service:

  • Tracking number for every order

  • 24/7 assistance:

  • Provide small quantities, special specifications products, and customized services, etc.

Shipping Worldwide:

  • After confirming the order, we will arrange the shipment within 3-5 working days.
  • We provide free shipping for products purchased above a certain amount.