Silicon Carbide Substrate 3inch Ultra Grade N Type 4H SiC Wafer IGBT

 High-purity SiC substrate for research and development.
 According to demand, we can provide custom-made service.

SiC Substrate Specification:

• Size: 3inch;
• Diameter: 76.2mm±0.38;
• Thickness: 350 um±25;
• Surface Orientation:off-axis: 4° toward <11-20> ± 0.5°;
• Primary flat orientation:[11-20]±5°；
• Secondary flat orientation:90.0˚ CW from Primary ± 5.0˚, silicon face up；
• Micropipe:≤1 micropipes/ cm2;
• Resistivity:0.015 Ω·cm～0.028 Ω·cm;
• TTV≤10um；
• Warp≤35um；
• Bow≤15um；
• Surface Roughness: Si face Ra≤0.5 nm;
• Cracks: None;
• Wafer edge: Chamfer;
• Surface finish: Double Side Polish, Si Face CMP;
• Packing: Multi-wafer Cassette Or Single Wafer Container;

Our Products and Service:

• Tracking number for every order
  
  
• 24/7 assistance: service@fuledatech.com
  
  
• Provide small quantities, special specifications products, and customized services, etc.
  
  

Shipping Worldwide:

• After confirming the order, we will arrange the shipment within 3-5 working days.

• We provide free shipping for products purchased above a certain amount.