Silicon Carbide Substrate 3inch Ultra Grade N Type 4H SiC Wafer IGBT
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High-purity SiC substrate for research and development.
According to demand, we can provide custom-made service.
SiC Substrate Specification:
- Size: 3inch;
- Diameter: 76.2mm±0.38;
- Thickness: 350 um±25;
- Surface Orientation:off-axis: 4° toward <11-20> ± 0.5°;
- Primary flat orientation:[11-20]±5°；
- Secondary flat orientation:90.0˚ CW from Primary ± 5.0˚, silicon face up；
- Micropipe:≤1 micropipes/ cm2;
- Resistivity:0.015 Ω·cm～0.028 Ω·cm;
- Surface Roughness: Si face Ra≤0.5 nm;
- Cracks: None;
- Wafer edge: Chamfer;
- Surface finish: Double Side Polish, Si Face CMP;
- Packing: Multi-wafer Cassette Or Single Wafer Container;
Our Products and Service:
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- Provide small quantities, special specifications products, and customized services, etc.
- After confirming the order, we will arrange the shipment within 3-5 working days.
- We provide free shipping for products purchased above a certain amount.