Silicon Carbide Substrate 6inch NG Grade N Type 4H SiC Wafer

 High-purity SiC substrate for research and development.
 According to demand, we can provide custom-made service.

SiC Substrate Specification:

• Size: 6inch;
• Type: N-Type
• Diameter: 150mm±0.2;
• Thickness: 350 um±25;
• Surface Orientation: 4°toward[11-20]±5°;
• Primary flat orientation:[11-20]±5°；
• Secondary flat orientation: None；
• Micropipe: None;
• Resistivity: None;
• Surface Roughness: Si face Ra≤0.5 nm;
• Cracks: None;
• Wafer edge: Bevelling;
• Surface finish: Double Side Polish;
• Packing: Multi-wafer Cassette Or Single Wafer Container;

Our Products and Services:

• Tracking number for every order
  
  
• 24/7 assistance: service@fuledatech.com
  
  
• Provide small quantities, special specifications products, customized services, etc.
  
  

Shipping Worldwide:

• After confirming the order, we will arrange the shipment within 1-3 working days.

• We provide free shipping for products purchased above a certain amount.