Silicon Carbide Substrate 8inch Dummy Grade N Type 4H SiC Wafer IGBT

 High-purity SiC substrate for research and development.
 According to demand, we can provide custom-made service.

SiC Substrate Specification:

• Size: 8inch;
• Diameter: 200mm±0.2;
• Thickness: 500um±25;
• Surface Orientation: 4 toward [11-20]±0.5°;
• Notch orientation:[1-100]±1°；
• Notch depth: 1±0.25mm；
• Micropipe: <5cm2;
• Hex Plates: area≤5%;
• Resistivity: 0.014~0.028Ω;
• EPD: N/A;
• TED: N/A;
• BPD: N/A;
• TSD: N/A;
• SF:    N/A;
• TTV≤15um；
• Warp≤60um；
• Bow≤40um；
• Poly areas: ≤5%;
• Chips/Indents: Qty:2≤1mm Width and Depth;
• Scratch: Cumulative Length≤1.5 Wafer Diameter;
• Stain: None;
• Wafer edge: Chamfer;
• Surface finish: Double Side Polish, Si Face CMP;
• Packing: Multi-wafer Cassette Or Single Wafer Container;

Our Products and Services:

• Tracking number for every order
  
  
• 24/7 assistance: service@fuledatech.com
  
  
• Provide small quantities, special specifications products, customized services, etc.
  
  

Shipping Worldwide:

• After confirming the order, we need to prepare the goods for about 2-3 months

• We provide free shipping for products purchased above a certain amount.