Silicon Carbide Substrate 8inch Production Grade N Type 4H SiC Wafer IGBT
High-purity SiC substrate for research and development.
According to demand, we can provide custom-made service.
SiC Substrate Specification:
- Size: 8inch;
- Diameter: 200mm±0.2;
- Thickness: 500um±25;
- Surface Orientation: 4 toward [11-20]±0.5°;
- Notch orientation:[1-100]±1°;
- Notch depth: 1±0.25mm;
- Micropipe: <1cm2;
- Hex Plates: None Permitted;
- Resistivity: 0.015~0.028Ω;
- EPD:<8000cm2;
- TED:<6000cm2
- BPD:<2000cm2
- TSD:<1000cm2
- SF: area<1%
- TTV≤15um;
- Warp≤40um;
- Bow≤25um;
- Poly areas: ≤5%;
- Scratch: <5 and Cummulatioe Length< 1 Wafer Diameter;
- Chips/Indents: None permit D>0.5mm Width and Depth;
- Cracks: None;
- Stain: None
- Wafer edge: Chamfer;
- Surface finish: Double Side Polish, Si Face CMP;
- Packing: Multi-wafer Cassette Or Single Wafer Container;
Our Products and Services:
Tracking number for every order
24/7 assistance: service@fuledatech.com
Provide small quantities, special specifications products, customized services, etc.
Shipping Worldwide:
After confirming the order, we need to prepare the goods for about 1~2 months
We provide free shipping for products purchased above a certain amount.
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