Silicon Carbide Substrate 8inch Production Grade N Type 4H SiC Wafer IGBT

  • $7,950.00
    Unit price per 
Shipping calculated at checkout.


 High-purity SiC substrate for research and development.
 According to demand, we can provide custom-made service.

SiC Substrate Specification:

  • Size: 8inch;
  • Diameter: 200mm±0.2;
  • Thickness: 500um±25;
  • Surface Orientation: 4 toward [11-20]±0.5°;
  • Notch orientation:[1-100]±1°;
  • Notch depth: 1±0.25mm;
  • Micropipe: <1cm2;
  • Hex Plates: None Permitted;
  • Resistivity: 0.015~0.028Ω;
  • EPD:<8000cm2;
  • TED:<6000cm2
  • BPD:<2000cm2
  • TSD:<1000cm2
  • SF: area<1%
  • TTV≤15um;
  • Warp≤40um;
  • Bow≤25um;
  • Poly areas: ≤5%;
  • Scratch: <5 and Cummulatioe Length< 1 Wafer Diameter;
  • Chips/Indents: None permit D>0.5mm Width and Depth;
  • Cracks: None;
  • Stain: None
  • Wafer edge: Chamfer;
  • Surface finish: Double Side Polish, Si Face CMP;
  • Packing: Multi-wafer Cassette Or Single Wafer Container;

Our Products and Services:

  • Tracking number for every order

  • 24/7 assistance: service@fuledatech.com

  • Provide small quantities, special specifications products, customized services, etc.

Shipping Worldwide:

  • After confirming the order, we need to prepare the goods for about 2-3 months
  • We provide free shipping for products purchased above a certain amount.
English