Silicon nitride thermal conductive substrate
Silicon nitride thermal conductive substrates are widely used in the fields of LED, microelectronic welding and other fields, power transmitters, photovoltaic devices, IGBT modules, semiconductor packaging substrates and other high-power optoelectronics and semiconductor devices.
| Items | Acceptance index | Unit |
| Size | 114×114×0.32 | ㎜ |
| Surface roughness | ≤0.8 | Ra |
| Bulk density | 3.20 ± 0.05 | g/cm3 |
| Modulus of elasticity | 300～320 | Gpa |
| Poisson's ratio | ≤0.29 | - |
| Vickers hardness | ≥14.2 | Gpa |
| Coefficient of thermal expansion (25 ℃ ~ 500 ℃) |
3.0～3.2 | 10-6/℃ |
| Fracture toughness | 6.0～7.0 | MPa |
|
Bending strength
(three point bending)
|
700～800 | Mpa |
|
Thermal conductivity
(25 ℃)
|
≥85 | W/(m•k) |