Silicon nitride thermal conductive substrate

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Silicon nitride thermal conductive substrates are widely used in the fields of LED, microelectronic welding and other fields, power transmitters, photovoltaic devices, IGBT modules, semiconductor packaging substrates and other high-power optoelectronics and semiconductor devices.

Items Acceptance index Unit
Size 114×114×0.32
Surface roughness ≤0.8 Ra
Bulk density 3.20 ± 0.05 g/cm3
Modulus of elasticity 300~320 Gpa
Poisson's ratio ≤0.29 -
Vickers hardness ≥14.2 Gpa
Coefficient of thermal expansion
(25 ℃ ~ 500 ℃)
3.0~3.2 10-6/℃
Fracture toughness 6.0~7.0 MPa
Bending strength 
(three point bending)
700~800 Mpa
Thermal conductivity 
(25 ℃)
≥85 W/(m•k)

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