Silicon Wafer 12inch P Type 1-100Ω Oxide Layer Semiconductor Substrate
Silicon Wafer 12inch P Type 1-100Ω Oxide Layer Semiconductor Substrate
Silicon Wafer 12inch P Type 1-100Ω Oxide Layer Semiconductor Substrate

FULEDE TECHNOLOGY

Silicon Wafer 12inch P Type 1-100Ω Oxide Layer Semiconductor Substrate

Sale price$1,890.00 USD
Number Of Items:25 Items
Specification:Oxide Film100nm
Quantity:

♦️ High-quality silicon wafer for Research and Experiment.
♦️ Provide small quantities, special specifications products, and customized services.
Silicon Wafer Specification:
  • Size: 12inch;
  • Method: CZ;
  • Type: P;
  • Dopant: B;
  • Orientation:100;
  • Resistivity: 1~100Ω;
  • Thickness: 775um±25;
  • Oxide film: 100nm/300nm/500nm/1000nm (both sides);
  • Surface: polished;
  • Backside: polished;
  • Packing: silicon wafer case ;