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Silicon wafer 2inch P/N Type 1~10Ω Oxide Layer Semiconductor Substrate

Sale price$16.90

Number Of Items:
Specification:

♦️High-quality silicon wafer for Research and Experiment.
♦️Provide small quantities, special specifications products, and customized services.
Silicon Wafer Specification:
  • Size: 2inch;
  • Method: CZ;
  • Type: P;
  • Dopant: B;
  • Orientation:100;
  • Resistivity: 1~10Ω;
  • Thickness: 525um±25;
  • Oxide layer: 100nm /300nm(both sides);
  • TTV<10um ;
  • Surface: polished;
  • Backside: etched;
  • Packing: silicon wafer case;
  • Size: 2inch;
  • Method: CZ;
  • Type: N;
  • Dopant: P;
  • Orientation:100;
  • Resistivity: 1~10Ω;
  • Thickness: 525um±25;
  • Oxide layer:100nm(both sides);
  • TTV<10um ;
  • Surface: polished;
  • Backside: etched;
  • Packing: silicon wafer case;
Silicon wafer 2inch P/N Type 1~10Ω Oxide Layer Semiconductor Substrate
Silicon wafer 2inch P/N Type 1~10Ω Oxide Layer Semiconductor Substrate Sale price$16.90

Business Cooperation

Unite Kingdom

Contact person: Elsa

Email: elsa@fuledatech.com

Tel: +44-7972294236

Japan

Contact person: Shon

Email: shon@fuledatech.com

Tel:+81-9050920178

Korea

Contact person: Kim

Email: kim@fuledatech.com

Tel: +82-1090065688

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