Silicon wafer 2inch P/N Type 0.005~0.009Ω Oxide Layer Semiconductor Substrate
Silicon wafer 2inch P/N Type 0.005~0.009Ω Oxide Layer Semiconductor Substrate
Silicon wafer 2inch P/N Type 0.005~0.009Ω Oxide Layer Semiconductor Substrate

FULEDE TECHNOLOGY

Silicon wafer 2inch P/N Type 0.005~0.009Ω Oxide Layer Semiconductor Substrate

Sale price$16.90 USD
Number Of Items:1 Item
Specification:P(100) Oxide Layer280nm
Quantity:

♦️High-quality silicon wafer for Research and Experiment.
♦️Provide small quantities, special specifications products, and customized services.
Silicon Wafer Specification:
  • Size: 2inch;
  • Method: CZ;
  • Type: P;
  • Dopant: B;
  • Orientation:100;
  • Resistivity: 0.005~0.009Ω;
  • Thickness: 500um±25;
  • Oxide layer: 280nm /300nm(both sides);
  • TTV<10um ;
  • Surface: polished;
  • Backside: etched;
  • Packing: silicon wafer case;
  • Size: 2inch;
  • Method: CZ;
  • Type: N;
  • Dopant: As;
  • Orientation:100;
  • Resistivity: 0.005~0.009Ω;
  • Thickness: 500um±25;
  • Oxide layer:300nm(both sides);
  • TTV<10um ;
  • Surface: polished;
  • Backside: etched;
  • Packing: silicon wafer case;