Silicon wafer 3inch P Type 0.01~0.09Ω Oxide Layer Semiconductor Substrate
Silicon wafer 3inch P Type 0.01~0.09Ω Oxide Layer Semiconductor Substrate
Silicon wafer 3inch P Type 0.01~0.09Ω Oxide Layer Semiconductor Substrate

FULEDE TECHNOLOGY

Silicon wafer 3inch P Type 0.01~0.09Ω Oxide Layer Semiconductor Substrate

Sale price$18.90 USD
Number Of Items:1 Item
Specification:P(100) Oxide Layer100nm
Quantity:

♦️High-quality silicon wafer for Research and Experiment.
♦️Provide small quantities, special specifications products, and customized services.
Silicon Wafer Specification:
  • Size: 3inch;
  • Method: CZ;
  • Type: P;
  • Dopant: B;
  • Orientation:100;
  • Resistivity: 0.01~0.09Ω;
  • Thickness: 525um±25;
  • Oxide layer: 100nm/300nm(both sides);
  • TTV<10um ;
  • Surface: polished;
  • Backside: etched;
  • Packing: silicon wafer case;