Silicon Wafer 4inch P-type 0.001~0.0009Ω Oxide Film 300nm Semiconductor Substrate
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Silicon Wafer Specification:
- Size: 4inch;
- Method: CZ;
- Type: P;
- Dopant: B;
- Resistivity: 0.001~0.0009Ω;
- Thickness: 525um±25;
- TTV＜10um ;
- Surface: polished;
- Backside: etched;
- Oxide film: 300nm (both sides);
- Packing: silicon wafer case ;
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