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Silicon Wafer 4inch N-type 0.003~0.005Ω Oxide Film 100nm Semiconductor Substrate
Silicon Wafer 4inch N-type 0.003~0.005Ω Oxide Film 100nm Semiconductor Substrate
Silicon Wafer 4inch N-type 0.003~0.005Ω Oxide Film 100nm Semiconductor Substrate

Silicon Wafer 4inch N-type 0.003~0.005Ω Oxide Film 100nm Semiconductor Substrate

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Silicon Wafer Specification:

  • Size: 4inch;
  • Method: CZ;
  • Type: N;
  • Dopant: As;
  • Orientation:100;
  • Resistivity: 0.003~0.005Ω;
  • Thickness: 525um±25;
  • TTV＜10um ;
  • Surface: polished;
  • Backside: etched;
  • Oxide film: 100nm (both sides);
  • Packing: silicon wafer case ;

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  • After confirming the order, we will arrange the shipment within 1-3 working days.
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