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Silicon Wafer 4inch P/N-type 0.01~0.02Ω Oxide Film 280/300/500nm Semiconductor Substrate
Silicon Wafer 4inch P/N-type 0.01~0.02Ω Oxide Film 280/300/500nm Semiconductor Substrate
Silicon Wafer 4inch P/N-type 0.01~0.02Ω Oxide Film 280/300/500nm Semiconductor Substrate
Silicon Wafer 4inch P/N-type 0.01~0.02Ω Oxide Film 280/300/500nm Semiconductor Substrate
Silicon Wafer 4inch P/N-type 0.01~0.02Ω Oxide Film 280/300/500nm Semiconductor Substrate

Silicon Wafer 4inch P/N-type 0.01~0.02Ω Oxide Film 280/300/500nm Semiconductor Substrate

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Silicon Wafer Specification:

  • Size: 4inch;
  • Method: CZ;
  • Type: P;
  • Dopant: B;
  • Orientation:100;
  • Resistivity: 0.01~0.02Ω;
  • Thickness: 525um±25;
  • TTV＜10um ;
  • Surface: polished;
  • Backside: etched;
  • Oxide film: 280/500nm (both sides);
  • Packing: silicon wafer case ;
  • Size: 4inch;
  • Method: CZ;
  • Type: N;
  • Dopant: Sb;
  • Orientation:100;
  • Resistivity: 0.01~0.02Ω;
  • Thickness: 525um±25/450um±25/500um±25;
  • TTV＜10um ;
  • Surface: polished;
  • Backside: etched;
  • Oxide film: 280/300nm (both sides);
  • Packing: silicon wafer case ;

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Shipping Worldwide:

  • After confirming the order, we will arrange the shipment within 1-3 working days.
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