Silicon Wafer 4inch P/N-type 0.01~0.05Ω Oxide Film 280nm Semiconductor Substrate

  • $16.90
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Silicon Wafer Specification:

  • Size: 4inch;
  • Method: CZ;
  • Type: P;
  • Dopant: B;
  • Orientation:100;
  • Resistivity: 0.01~0.05Ω;
  • Thickness: 525um±25;
  • TTV<10um ;
  • Surface: polished;
  • Backside: etched;
  • Oxide film: 280nm (both sides);
  • Packing: silicon wafer case ;
  • Size: 4inch;
  • Method: CZ;
  • Type: N;
  • Dopant: Sb;
  • Orientation:100;
  • Resistivity: 0.01~0.05Ω;
  • Thickness: 425um±25;
  • TTV<10um ;
  • Surface: polished;
  • Backside: etched;
  • Oxide film: 280nm (both sides);
  • Packing: silicon wafer case ;

Our Products and Service:

  • Tracking number for every order

  • 24/7 assistance: service@fuledatech.com

  • Provide small quantities, special specifications products and customized services, etc.

Shipping Worldwide:

  • After confirming the order, we will arrange the shipment within 1-3 working days.
  • We provide free shipping for products purchased above a certain amount.
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