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Silicon wafer 4inch P/N Type 1~10Ω Oxide Layer Semiconductor Substrate

Sale price$21.90

Number Of Items:
Specification:

Silicon Wafer Specification:

  • Size: 4inch;
  • Method: CZ;
  • Type: P;
  • Dopant: B;
  • Orientation:100;
  • Resistivity: 1~10Ω;
  • Thickness: 525um±25;
  • Oxide film: 280/300/500nm (both sides);
  • TTV<10um ;
  • Surface: polished;
  • Backside: etched;
  • Packing: silicon wafer case ;
  • Size: 4inch;
  • Method: CZ;
  • Type: N;
  • Dopant: P;
  • Orientation:100;
  • Resistivity: 1~10Ω;
  • Thickness: 525um±25;
  • Oxide film: 100/280nm (both sides);
  • TTV<10um ;
  • Surface: polished;
  • Backside: etched;
  • Packing: silicon wafer case ;

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  • Provide small quantities, special specifications products, customized services, etc.

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  • After confirming the order, we will arrange the shipment within 1-3 working days.
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Silicon wafer 4inch P/N Type 1~10Ω Oxide Layer Semiconductor Substrate
Silicon wafer 4inch P/N Type 1~10Ω Oxide Layer Semiconductor Substrate Sale price$21.90

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