Silicon Wafer 4inch P-type 1~10Ω Oxide Film 200/280/300nm Semiconductor Substrate

Silicon Wafer Specification:

• Size: 4inch;
• Method: CZ;
• Type: P;
• Dopant: B;
• Orientation:100;
• Resistivity: 1~10Ω;
• Thickness: 525um±25;
• TTV＜10um ;
• Surface: polished;
• Backside: etched;
• Oxide film: 200/280/300nm (both sides);
• Packing: silicon wafer case ;

Our Products and Service:

• Tracking number for every order
  
  
• 24/7 assistance: service@fuledatech.com
  
  
• Provide small quantities, special specifications products and customized services, etc.
  
  

Shipping Worldwide:

• After confirming the order, we will arrange the shipment within 1-3 working days.

• We provide free shipping for products purchased above a certain amount.