Silicon Wafer 4inch N-type 1~20Ω Oxide Film 300nm Semiconductor Substrate

  • $16.90
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Silicon Wafer Specification:

  • Size: 4inch;
  • Method: CZ;
  • Type: N;
  • Dopant: P;
  • Orientation:100;
  • Resistivity: 1~20Ω;
  • Thickness: 525um±25;
  • TTV<10um ;
  • Surface: polished;
  • Backside: etched;
  • Oxide film: 300nm (both sides);
  • Packing: silicon wafer case ;

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