Silicon wafer 4inch P Type 10~20Ω Oxide Layer 300nm Semiconductor Substrate
Silicon wafer 4inch P Type 10~20Ω Oxide Layer 300nm Semiconductor Substrate
Silicon wafer 4inch P Type 10~20Ω Oxide Layer 300nm Semiconductor Substrate

FULEDE TECHNOLOGY

Silicon wafer 4inch P Type 10~20Ω Oxide Layer 300nm Semiconductor Substrate

Sale price$21.90 USD
Number Of Items:1 Item
Specification:P-Type(100) 500um Oxide Layer 300nm
Quantity:

Silicon Wafer Specification:

  • Size: 4inch;
  • Method: CZ;
  • Type: P;
  • Dopant: B;
  • Orientation:100;
  • Resistivity: 10~20Ω;
  • Thickness: 525um±25;
  • TTV<10um ;
  • Surface: polished;
  • Backside: etched;
  • Oxide film: 300nm (both sides);
  • Packing: silicon wafer case ;

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