Silicon Wafer 4inch P-type 10~20Ω Oxide Film 200/300nm Semiconductor Substrate

Silicon Wafer Specification:

• Size: 4inch;
• Method: CZ;
• Type: P;
• Dopant: B;
• Orientation:100;
• Resistivity: 10~20Ω;
• Thickness: 525um±25/500um±25;
• TTV＜10um ;
• Surface: polished;
• Backside: etched;
• Oxide film: 200/300nm (both sides);
• Packing: silicon wafer case ;

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• After confirming the order, we will arrange the shipment within 1-3 working days.

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