Silicon wafer 4inch P Type 0.01~0.05Ω Oxide Layer Semiconductor Substrate
Silicon wafer 4inch P Type 0.01~0.05Ω Oxide Layer Semiconductor Substrate
Silicon wafer 4inch P Type 0.01~0.05Ω Oxide Layer Semiconductor Substrate

FULEDE TECHNOLOGY

Silicon wafer 4inch P Type 0.01~0.05Ω Oxide Layer Semiconductor Substrate

Sale price$21.90 USD
Number Of Items:1 Item
Specification:P(100) 450um Oxide Layer500nm
Quantity:

♦️ High-quality silicon wafer for Research and Experiment.
♦️ Provide small quantities, special specifications products, and customized services.
Silicon Wafer Specification:
  • Size: 4inch;
  • Method: CZ;
  • Type: P;
  • Dopant: B;
  • Orientation:100;
  • Resistivity: 0.01~0.05Ω;
  • Thickness: 400um±25/525um±25;
  • Oxide film: 280nm/500nm (both sides);
  • TTV<10um ;
  • Surface: polished;
  • Backside: etched;
  • Packing: silicon wafer case ;