Silicon wafer 4inch N Type 0.01~0.02Ω Oxide Layer Semiconductor Substrate
Silicon wafer 4inch N Type 0.01~0.02Ω Oxide Layer Semiconductor Substrate
Silicon wafer 4inch N Type 0.01~0.02Ω Oxide Layer Semiconductor Substrate

FULEDE TECHNOLOGY

Silicon wafer 4inch N Type 0.01~0.02Ω Oxide Layer Semiconductor Substrate

Sale price$21.90 USD
Number Of Items:1 Item
Specification:N(100) 450um Oxide Layer280nm
Quantity:

♦️High-quality silicon wafer for Research and Experiment.
♦️Provide small quantities, special specifications products, and customized services.
Silicon Wafer Specification:
  • Size: 4inch;
  • Method: CZ;
  • Type: N;
  • Dopant: Sb;
  • Orientation:100;
  • Resistivity: 0.01~0.02Ω;
  • Thickness: 450um±25/525um±25;
  • Oxide layer: 280nm /300nm(both sides);
  • TTV<10um ;
  • Surface: polished;
  • Backside: etched;
  • Packing: silicon wafer case;