Silicon Wafer 4inch N-type(100) 0.01~0.02Ω Gold Film 100nm Semiconductor Substrate
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Silicon Wafer Specification:
- Size: 4inch;
- Method: CZ;
- Type: N;
- Dopant: Sb;
- Resistivity: 0.01~0.02Ω;
- Thickness: 500um±25;
- TTV＜10um ;
- Surface: polished;
- Backside: etched;
- Gold film: 100nm (cr30nm;Au 100nm);
- Packing: silicon wafer case ;
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