Silicon Wafer 4inch N-type(111) 6~12Ω Silver Film 100nm Semiconductor Substrate
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Silicon Wafer Specification:
- Size: 4inch;
- Method: CZ;
- Type: N;
- Dopant: P;
- Resistivity: 6~12Ω;
- Thickness: 500um±25;
- TTV＜10um ;
- Surface: polished;
- Backside: etched;
- Silver film: 100nm (Ti50nm,Ag100nm);
- Packing: silicon wafer case ;
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