Silicon wafer 4inch N Type(100) 0.01~0.02Ω Gold Layer 100nm Semiconductor Substrate
Silicon wafer 4inch N Type(100) 0.01~0.02Ω Gold Layer 100nm Semiconductor Substrate
Silicon wafer 4inch N Type(100) 0.01~0.02Ω Gold Layer 100nm Semiconductor Substrate

FULEDE TECHNOLOGY

Silicon wafer 4inch N Type(100) 0.01~0.02Ω Gold Layer 100nm Semiconductor Substrate

Sale price$61.90 USD
Number Of Items:1 Item
Specification:N-Type(100) 500um Gold Layer 100nm
Quantity:

♦️ High-quality silicon wafer for Research and Experiment.
♦️ Provide small quantities, special specifications products, and customized services.
Silicon Wafer Specification:
  • Size: 4inch;
  • Method: CZ;
  • Type: N;
  • Dopant: Sb;
  • Orientation:100;
  • Resistivity: 0.01~0.02Ω;
  • Thickness: 500um±25;
  • TTV<10um ;
  • Surface: polished;
  • Backside: etched;
  • Gold film: 100nm (cr30nm;Au 100nm);
  • Packing: silicon wafer case;