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Silicon wafer 6inch P Type100 1~20Ω Oxide Layer 90nm Semiconductor Substrate

Sale price$512.50

Specification:
Number Of Items:
♦️ High-quality silicon wafer for Research and Experiment.
♦️ Provide small quantities, special specifications products, and customized services.
Silicon Wafer Specification:
  • Size: 6inch;
  • Method: CZ;
  • Type: P;
  • Dopant: B;
  • Orientation: 100;
  • Resistivity: 1~20Ω·cm;
  • Thickness: 625um±25;
  • Oxide layer: 90nm (both sides);
  • TTV<15um ;
  • Surface: polished;
  • Backside: etched;
  • Packing: silicon wafer case;
Silicon wafer 6inch P Type100 1~20Ω Oxide Layer 90nm Semiconductor Substrate
Silicon wafer 6inch P Type100 1~20Ω Oxide Layer 90nm Semiconductor Substrate Sale price$512.50

Business Cooperation

Unite Kingdom

Contact person: Elsa

Email: elsa@fuledatech.com

Tel: +44-7972294236

Japan

Contact person: Shon

Email: shon@fuledatech.com

Tel:+81-9050920178

Korea

Contact person: Kim

Email: kim@fuledatech.com

Tel: +82-1090065688

worldwide shipping

worldwide shipping wit Fedex or DHL etc

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