Silicon Wafer 8inch P-type 1-100Ω Oxide Film Semiconductor Substrate

Silicon Wafer Specification:

• Size: 8inch;
• Method: CZ;
• Type: P;
• Dopant: B;
• Orientation:100;
• Resistivity: 1~100Ω;
• Thickness: 725um±25;
• Oxide film: 100nm (both sides);
• Surface: polished;
• Backside: etched;
• Packing: silicon wafer case ;

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